{"id":3905,"date":"2020-11-27T10:22:30","date_gmt":"2020-11-27T09:22:30","guid":{"rendered":"https:\/\/finepower.com\/?p=3905"},"modified":"2021-09-16T12:16:34","modified_gmt":"2021-09-16T11:16:34","slug":"efficient-power-conversion-epc-launches-170-v-egan-fet-offering-best-in-class-synchronous-rectification-performance-and-cost-to-seize-high-end-server-and-consumer-power-supply-applications","status":"publish","type":"post","link":"https:\/\/finepower.com\/en\/efficient-power-conversion-epc-launches-170-v-egan-fet-offering-best-in-class-synchronous-rectification-performance-and-cost-to-seize-high-end-server-and-consumer-power-supply-applications\/","title":{"rendered":"EPC Launches new 170 V eGaN\u00ae FET for High End and Consumer PSU Applications"},"content":{"rendered":"

EPC introduces 170 V, 6.8 milliohm <\/em>EPC2059<\/em><\/a> eGaN\u00ae<\/sup> FET, offering designers a device that is smaller, more efficient, more reliable, and lower cost than currently available devices for high performance 48 V synchronous rectification.<\/em><\/p>\n

EL SEGUNDO, Calif. \u2014 November 2019 \u2014 Efficient Power Conversion Corporation<\/a>, the world\u2019s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2059<\/a> (6.8 m\u2126, 170 V) eGaN FET.\u00a0 This device is the latest in a family of 100 V \u2013 200 V<\/a> solutions suitable for a wide-range of power levels and price points. They are designed to meet the increasing demands of 48 V \u2013 56 V server and data center products as well as an array of consumer power supply applications for high end computing, including gaming PCs, LCD\/LED TVs, and LED lighting.<\/p>\n

The EPC2059<\/a> is ideal for DC-DC secondary-side synchronous rectification<\/a> in AC\/DC adaptors, fast chargers, and power supplies with power ranges between 100 W and 6 kW.\u00a0 The performance advantage of gallium nitride devices helps designers achieve the demanding efficiency requirements for 80 Plus Titanium power supplies, while providing smaller, faster, cooler, and lighter systems with lower system costs then currently available solutions.<\/p>\n

According to Alex Lidow, EPC\u2019s co-founder and CEO, \u201cThere are very significant performance advantages gained from using GaN in the secondary-side synchronous rectification socket of AC\/DC adaptors. In a 400 V to 48 V conversion, switching at 1 MHz, GaN has shown to have one-sixth the losses and run 10 degrees cooler than a silicon MOSFET with equivalent on resistance.\u00a0 This enables designers to meet the latest stringent energy efficiency standards for high-end computing, where growth is exploding for multiple applications, such as artificial intelligence (AI), cloud computing, and high-end gaming systems.\u201d<\/p>\n

Development Board<\/strong><\/p>\n

The EPC9098<\/a> development board is a 170 V maximum device voltage, 25 A maximum output current, half bridge with onboard gate drives, featuring the EPC2059<\/a> eGaN FETs. This 2\u201d x 2\u201d (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2059<\/a>.<\/p>\n

Price and Availability<\/strong><\/p>\n

Feel free to contact us – at Finepower<\/a> we offer you a complete consultation on all EPC products!<\/p>\n

 <\/p>\n

<\/p>\n

About EPC<\/u><\/strong><\/p>\n

EPC is the leader in enhancement-mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters<\/a>, wireless power transfer<\/a>, envelope tracking<\/a>, RF transmission, power inverters<\/a>, remote sensing technology (lidar),<\/a> and class-D audio amplifiers<\/a> with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.<\/p>\n

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.<\/p>\n

 <\/p>\n","protected":false},"excerpt":{"rendered":"

EPC introduces 170 V, 6.8 milliohm EPC2059 eGaN\u00ae FET, offering designers a device that is smaller, more efficient, more reliable, and lower cost than currently available devices for high performance […]<\/p>\n","protected":false},"author":9,"featured_media":3903,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_exactmetrics_skip_tracking":false,"_exactmetrics_sitenote_active":false,"_exactmetrics_sitenote_note":"","_exactmetrics_sitenote_category":0,"footnotes":""},"categories":[45],"tags":[],"class_list":["post-3905","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-latest-publications"],"yoast_head":"\nEPC Launches new 170 V eGaN\u00ae FET for High End and Consumer PSU Applications - Finepower<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" 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