{"id":4391,"date":"2021-10-07T14:49:37","date_gmt":"2021-10-07T13:49:37","guid":{"rendered":"https:\/\/finepower.com\/?p=4391"},"modified":"2021-11-15T13:07:38","modified_gmt":"2021-11-15T12:07:38","slug":"success-story-with-gan-using-epc2059","status":"publish","type":"post","link":"https:\/\/finepower.com\/en\/success-story-with-gan-using-epc2059\/","title":{"rendered":"Success story with GaN using EPC2059"},"content":{"rendered":"<p><span class=\"TextRun BCX0 SCXW128040945\" lang=\"DE-DE\" xml:lang=\"DE-DE\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">The\u00a0<\/span><\/span><a class=\"Hyperlink BCX0 SCXW128040945\" href=\"https:\/\/epc-co.com\/epc\/Products\/eGaNFETsandICs\/EPC2059.aspx?utm_source=BusinessWire&amp;utm_medium=PR&amp;utm_campaign=innosonix\" target=\"_blank\" rel=\"noreferrer noopener\"><span class=\"TextRun BCX0 SCXW128040945\" lang=\"DE-DE\" xml:lang=\"DE-DE\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">EPC2059<\/span><\/span><\/a><span class=\"TextRun BCX0 SCXW128040945\" lang=\"DE-DE\" xml:lang=\"DE-DE\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">\u00a0is a 6.8 m\u2126, 170 V enhancement-mode gallium nitride (eGaN) transistor offering superior audio performance for\u00a0<\/span><\/span><a class=\"Hyperlink BCX0 SCXW128040945\" href=\"https:\/\/epc-co.com\/epc\/Applications\/ClassDAudio.aspx?utm_source=BusinessWire&amp;utm_medium=PR&amp;utm_campaign=innosonix\" target=\"_blank\" rel=\"noreferrer noopener\"><span class=\"TextRun BCX0 SCXW128040945\" lang=\"DE-DE\" xml:lang=\"DE-DE\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">high-end amplifier<\/span><\/span><\/a><span class=\"TextRun BCX0 SCXW128040945\" lang=\"DE-DE\" xml:lang=\"DE-DE\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">\u00a0applications. The low on resistance and low capacitance of the\u00a0<\/span><\/span><span class=\"TextRun BCX0 SCXW128040945\" lang=\"DE-DE\" xml:lang=\"DE-DE\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">EPC2059\u00a0<\/span><\/span><span class=\"TextRun BCX0 SCXW128040945\" lang=\"DE-DE\" xml:lang=\"DE-DE\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">enables high efficiency and lowers open loop impedance for low\u00a0<\/span><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">Transient<\/span><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">\u00a0Intermodulation Distortion (T-IMD).\u00a0<\/span><\/span><span class=\"TextRun BCX0 SCXW128040945\" lang=\"EN-GB\" xml:lang=\"EN-GB\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">The fast-switching capability and zero reverse recovery charge enable higher output linearity and low cross over distortion for lower Total Harmonic Distortion (THD).<\/span><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">\u00a0<\/span><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">By using the\u00a0<\/span><\/span><span class=\"TextRun BCX0 SCXW128040945\" lang=\"EN-GB\" xml:lang=\"EN-GB\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">EPC2059\u00a0<\/span><\/span><span class=\"TextRun BCX0 SCXW128040945\" lang=\"EN-GB\" xml:lang=\"EN-GB\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">eGaN FET,\u00a0<\/span><\/span><span class=\"TextRun BCX0 SCXW128040945\" lang=\"EN-GB\" xml:lang=\"EN-GB\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">innosonix<\/span><\/span><span class=\"TextRun BCX0 SCXW128040945\" lang=\"EN-GB\" xml:lang=\"EN-GB\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">\u00a0was able to decrease the idle switching loss as the total gate charge was nearly reduced by half.\u00a0<\/span><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">The output capacitance only doubled for tripling the max drain voltage enabling\u00a0<\/span><\/span><span class=\"TextRun BCX0 SCXW128040945\" lang=\"EN-GB\" xml:lang=\"EN-GB\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">i<\/span><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">nnosonix<\/span><\/span><span class=\"TextRun BCX0 SCXW128040945\" lang=\"EN-GB\" xml:lang=\"EN-GB\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">\u00a0to switch from a\u00a0<\/span><span class=\"NormalTextRun ContextualSpellingAndGrammarErrorV2 BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">full-bridge<\/span><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">\u00a0to a half-bridge design, which also reduced component count costs.\u00a0<\/span><\/span><span class=\"TextRun BCX0 SCXW128040945\" lang=\"DE-DE\" xml:lang=\"DE-DE\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">The low\u00a0<\/span><span class=\"NormalTextRun SpellingErrorV2 BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">package<\/span><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">\u00a0<\/span><span class=\"NormalTextRun SpellingErrorV2 BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">inductance<\/span><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">\u00a0gives a clean switching waveform which leads to a nearly perfect switching voltage and, therefore, better linearity.\u00a0<\/span><\/span><span class=\"TextRun BCX0 SCXW128040945\" lang=\"EN-GB\" xml:lang=\"EN-GB\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">This resulted in a reduction in harmonic distortion of almost 6dB and the subjective audio quality has improved audibly, to benefit customers.<\/span><\/span><span class=\"TextRun BCX0 SCXW128040945\" lang=\"EN-US\" xml:lang=\"EN-US\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">\u00a0 If you want to learn more, read a report here. <a href=\"https:\/\/lnkd.in\/eyzTcree\">https:\/\/lnkd.in\/eyzTcree <\/a><\/span><\/span><span class=\"TextRun BCX0 SCXW128040945\" lang=\"EN-GB\" xml:lang=\"EN-GB\" data-contrast=\"auto\"><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">Our FAE team can show you even more technologically advanced products from\u00a0<\/span><span class=\"NormalTextRun ContextualSpellingAndGrammarErrorV2 BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">EPC,<\/span><span class=\"NormalTextRun BCX0 SCXW128040945\" data-ccp-parastyle=\"Normal (Web)\">\u00a0we would be happy to inform you individually during a personal training.<\/span><\/span><\/p>\n","protected":false},"excerpt":{"rendered":"<p>The\u00a0EPC2059\u00a0is a 6.8 m\u2126, 170 V enhancement-mode gallium nitride (eGaN) transistor offering superior audio performance for\u00a0high-end amplifier\u00a0applications. The low on resistance and low capacitance of the\u00a0EPC2059\u00a0enables high efficiency and lowers [&hellip;]<\/p>\n","protected":false},"author":9,"featured_media":4384,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_exactmetrics_skip_tracking":false,"_exactmetrics_sitenote_active":false,"_exactmetrics_sitenote_note":"","_exactmetrics_sitenote_category":0,"footnotes":""},"categories":[47,24,45],"tags":[195,142,422],"class_list":["post-4391","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-distribution-en","category-in-the-press-en","category-latest-publications","tag-epc-en","tag-gan-en","tag-halfbridge"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v23.7 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>Success story with GaN using EPC2059 - Finepower<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/finepower.com\/en\/success-story-with-gan-using-epc2059\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Success story with GaN using EPC2059 - Finepower\" \/>\n<meta property=\"og:description\" content=\"The\u00a0EPC2059\u00a0is a 6.8 m\u2126, 170 V enhancement-mode gallium nitride (eGaN) transistor offering superior audio performance for\u00a0high-end amplifier\u00a0applications. 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