{"id":5894,"date":"2026-11-10T11:15:43","date_gmt":"2026-11-10T10:15:43","guid":{"rendered":"https:\/\/finepower.com\/?p=5894"},"modified":"2026-11-10T11:17:49","modified_gmt":"2026-11-10T10:17:49","slug":"epc2305-a-high-performance-150-v-egan-power-transistor-for-next-generation-power-electronics","status":"publish","type":"post","link":"https:\/\/finepower.com\/en\/epc2305-a-high-performance-150-v-egan-power-transistor-for-next-generation-power-electronics\/","title":{"rendered":"EPC2305 \u2013 A High\u2011Performance 150\u202fV eGaN\u00ae Power Transistor for Next\u2011Generation Power Electronics"},"content":{"rendered":"

The \ud835\udc04\ud835\udc0f\ud835\udc02\ud835\udfd0\ud835\udfd1\ud835\udfce\ud835\udfd3 is a 150\u00a0V enhancementmode GaN FET housed in a compact 3\u00a0mm \u00d7 5\u00a0mm low-inductance QFN package with an exposed top surface for improved thermal management. It’s typical RDS (on) of 2.2\u00a0m\u03a9 (maximum 3\u00a0m\u03a9) enables exceptionally low conduction losses, making it suitable for high-current applications. The device supports a continuous drain current of 133\u00a0A below 125 \u00b0C and a pulsed current rating of 329\u00a0A (at 25 \u00b0C), demonstrating its capability to handle demanding transient loads. One of the standout features of the \ud835\udc04\ud835\udc0f\ud835\udc02\ud835\udfd0\ud835\udfd1\ud835\udfce\ud835\udfd3 is its Thermal-Max package, which includes an exposed top metal surface. This design significantly reduces the thermal resistance from junction to case, achieving a value of 0.2\u00a0\u00b0C\/W, enabling efficient heat extraction through topside cooling.<\/p>\n

The \ud835\udc04\ud835\udc0f\ud835\udc02\ud835\udfd0\ud835\udfd1\ud835\udfce\ud835\udfd3 is optimized for a wide range of modern power\u2011electronics applications, including:<\/p>\n

# High\u2011frequency DC\u2011DC Converters<\/strong><\/p>\n

# AC\u2011DC Charger and Adapters<\/strong><\/p>\n

# BLDC Motor Drives<\/strong><\/p>\n

# eMobility Motor Controllers<\/strong><\/p>\n

# Solar Optimizers and MPPT Systems<\/strong><\/p>\n

# Class\u2011D Audio amplifiers<\/strong><\/p>\n

# Fast chargers for phones, notebooks, and gaming PCs<\/strong><\/p>\n

# Power tools, home robotics, and vacuum cleaners<\/strong><\/p>\n

In these applications, the \ud835\udc04\ud835\udc0f\ud835\udc02\ud835\udfd0\ud835\udfd1\ud835\udfce\ud835\udfd3\u2019s combination of high efficiency, low losses, and compact size enables designers to achieve higher power density and improved thermal behaviour. The \ud835\udc04\ud835\udc0f\ud835\udc02\ud835\udfd0\ud835\udfd1\ud835\udfce\ud835\udfd3 represents a significant advancement in GaN power transistor technology. Its combination of 150\u00a0V capability, 2.2\u00a0m\u03a9 on resistance, ultralow switching losses, and innovative Thermal Max packaging make it an excellent choice for next generation power-electronics systems. Finepower FAE Team will technically support your design activities, your Innovation Hub is ready. Finepower GmbH<\/strong> EPC – Efficient Power Conversion<\/strong><\/p>\n","protected":false},"excerpt":{"rendered":"

The \ud835\udc04\ud835\udc0f\ud835\udc02\ud835\udfd0\ud835\udfd1\ud835\udfce\ud835\udfd3 is a 150\u00a0V enhancementmode GaN FET housed in a compact 3\u00a0mm \u00d7 5\u00a0mm low-inductance QFN package with an exposed top surface for improved thermal management. It’s typical RDS […]<\/p>\n","protected":false},"author":9,"featured_media":5891,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_exactmetrics_skip_tracking":false,"_exactmetrics_sitenote_active":false,"_exactmetrics_sitenote_note":"","_exactmetrics_sitenote_category":0,"footnotes":""},"categories":[23],"tags":[],"class_list":["post-5894","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-uncategorized"],"yoast_head":"\nEPC2305 \u2013 A High\u2011Performance 150\u202fV eGaN\u00ae Power Transistor for Next\u2011Generation Power Electronics - Finepower<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/finepower.com\/en\/epc2305-a-high-performance-150-v-egan-power-transistor-for-next-generation-power-electronics\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"EPC2305 \u2013 A High\u2011Performance 150\u202fV eGaN\u00ae Power Transistor for Next\u2011Generation Power Electronics - Finepower\" \/>\n<meta property=\"og:description\" content=\"The \ud835\udc04\ud835\udc0f\ud835\udc02\ud835\udfd0\ud835\udfd1\ud835\udfce\ud835\udfd3 is a 150\u00a0V enhancementmode GaN FET housed in a compact 3\u00a0mm \u00d7 5\u00a0mm low-inductance QFN package with an exposed top surface for improved thermal management. 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