EPC2305 – A High‑Performance 150 V eGaN® Power Transistor for Next‑Generation Power Electronics
The 𝐄𝐏𝐂𝟐𝟑𝟎𝟓 is a 150 V enhancementmode GaN FET housed in a compact 3 mm × 5 mm low-inductance QFN package with an exposed top surface for improved thermal management. It's typical RDS [...]
